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| inchange semiconductor product specification silicon pnp power transistors BD204 description ? ? with to-220c package ? low saturation voltage ? complement to type bd203 ? wide area of safe operation applications ? for medium power switching and amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -8 a i cm collector current-peak -12 a i bm base current-peak -3 a p t total power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.08 ??/w
inchange semiconductor product specification 2 silicon pnp power transistors BD204 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.2a ;i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ; i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -5 v v cesat-1 collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-6a; i b =-0.6a -1.5 v v besat base-emitter saturation voltage i c =-6a; i b =-0.6a -2.0 v i ceo collector cut-off current v ce =-30v ;i b =0; -0.2 ma i cbo collector cut-off current v cb =-40v ;i e =0;t j =150 ?? -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.5 ma h fe dc current gain i c =-2a ; v ce =-2v 30 f t transition frequency i c =-0.3a ; v ce =-3v 7.0 mhz v be base-emitter on voltage i c =-3a;v ce =-2v -1.5 v inchange semiconductor product specification 3 silicon pnp power transistors BD204 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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